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| Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) 2.9V @VGE = 15V, I C = 23A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 42 23 84 84 10 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) Revision 1 C-471 To Order Previous Datasheet Index Next Data Sheet IRGPH50M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.1 -- V/C VGE = 0V, I C = 1.0mA -- 2.3 2.9 IC = 23A V GE = 15V -- 3.0 -- V IC = 42A See Fig. 2, 5 -- 2.8 -- IC = 23A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -13 -- mV/C VCE = VGE, IC = 250A 11 15 -- S VCE = 100V, I C = 23A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 2000 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -- 89 130 IC = 23A -- 22 33 nC VCC = 400V See Fig. 8 -- 26 39 VGE = 15V -- 42 -- TJ = 25C -- 32 -- ns IC = 23A, V CC = 960V -- 280 820 VGE = 15V, R G = 5.0 -- 190 410 Energy losses include "tail" -- 1.6 -- -- 3.3 -- mJ See Fig. 9, 10, 11, 14 -- 4.9 11 10 -- -- s VCC = 720V, T J = 125C VGE = 15V, R G = 5.0, VCPK < 1000V -- 32 -- TJ = 150C, -- 21 -- ns IC = 23A, V CC = 960V -- 490 -- VGE = 15V, R G = 5.0 -- 440 -- Energy losses include "tail" -- 10 -- mJ See Fig. 10, 14 -- 13 -- nH Measured 5mm from package -- 1900 -- VGE = 0V -- 140 -- pF VCC = 30V See Fig. 7 -- 24 -- = 1.0MHz C-472 To Order Previous Datasheet Index Next Data Sheet IRGPH50M 50 For b oth : Triangula r w ave: 40 LO A D C U R RE NT (A ) D uty c y cle: 50% TJ = 125C T sink = 90 C G ate driv e as spe c ified P ow er D is sipation = 4 0W S quare w ave: 60% of rated voltage C lamp voltage: 80% of rated 30 20 10 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 1000 I C , C ollector-to-E m itter C urre nt (A) 25 C 100 IC , C ollector-to-E m itter Cu rrent (A ) 100 1 5 0C 1 50 C 2 5C 10 10 1 1 V GE = 15 V 20 s P U L S E W ID T H 10 1 5 10 V C C = 1 0 0V 5 s P U L S E W ID TH 15 20 V C E , C ollector-to-Em itter V oltage (V) V G E , G a te-to-E m itter V oltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-473 To Order Previous Datasheet Index Next Data Sheet IRGPH50M 50 V GE = 1 5V 6.0 V C E , C ollec tor-to-E m itter V oltage (V ) M a xim um D C C ollector Current (A ) 5.5 5.0 V G E = 1 5V 8 0 s P U L S E W ID TH 40 I C = 4 6A 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 30 20 I C = 2 3A 10 I C = 12A 0 25 50 75 100 125 15 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem p erature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T h e rm a l R e s p o n se (Z th JC ) D = 0 .5 0 0 .2 0 0.1 0 .1 0 0 .0 5 S IN G L E P U LS E (T H E R M A L R E S P O N S E ) N otes : 1 . D uty fact or D = t 1 /t 2 PD M t 1 t 2 0 .0 2 0 .0 1 0.01 0.00001 2. P eak T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu lar P u ls e D u ra tion (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-474 To Order Previous Datasheet Index Next Data Sheet IRGPH50M 4000 V G E , G ate-to-E m itter Voltag e (V) 100 V GE = C ie s = C re s = C o es = 0V, f = 1M Hz C ge + C gc , C ce SHO R TED C gc C ce + C gc 20 V CE = 4 00 V IC = 23A 16 3000 C , C a pa citan ce (pF ) C oes 2000 12 C ies 8 1000 C res 4 0 1 10 0 0 20 40 60 80 100 V C E , C ollector-to-Em itter V oltage (V) Q G , Total G a te C ha rge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 6.0 Total Switching Losses (mJ) T otal S witching Loss es (m J) 5.8 VCC VGE TC IC = 960V = 15V = 25C = 23A 100 RG = 5 V G E = 1 5V V C C = 9 60 V I C = 46 A 5.6 5.4 10 I C = 23 A 5.2 5.0 I C = 11 A 4.8 0 10 20 30 40 50 A 60 1 -60 -4 0 -20 0 20 40 60 80 100 120 140 160 R G , Gate Resistance () TC , C a se Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-475 To Order Previous Datasheet Index Next Data Sheet IRGPH50M 25 20 I , C ollector-to-E m itter C urrent (A ) Total Sw itching Losses (m J) RG TC V CC V GE =5 = 1 5 0C = 96 0V = 15 V 1000 VG E E 2 0V G= T J = 1 2 5C 100 15 S A F E O P E R A T IN G A R E A 10 10 1 5 C 0.1 1 0 0 10 20 30 40 50 10 100 1000 10000 I C , C ollec tor-to-E m itte r C urren t (A ) VC E , C o lle ctor-to -E m itte r V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13 C-476 To Order |
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